Influence of βn / βp on the VTC characteristics: Figure: Effect of βn/βp ratio change on the DC characteristics of CMOS inverter. If βn= βp and V. tn = - V. tp V. in = 0.5 V dd = V. out Since only at this point will the two β factors be equal. This is … The curves share the similar shape which is also the shape of a normal CMOS inverter. This yields the equivalent circuit of Figure 5.2a. The curve shifts right if the ratio of βn/βp is lesser than 1(say 0.1). … In such a situation, as the drain voltage is increased the slope of the fluid flowing out increases indicating linear increase in the flow of … Mobility depends on _____ Option A: Transverse electric field Option B: Vg Option C: Vdd Option D: Channel length . is high and equal to V DD, the NMOS transistor is on, while the PMOS is off. However, the VOL increases when the ratio of βN/βP decreases and for a large βN/βP, the VOL approaches 0. ratio of βn/βp If βn/βp = 1, then switching point is Vdd/2 If W/L of both N and P transistors are equal Then βn/βp = μ n/ μ p = electron mobility / hole mobility This ratio is usually between 2 and 3 Means ratio of W ptree/W ntree needs to be between 2 and 3 for βn/βp= 1 For this class, we’ll use W ptree/W ntree = … Rp = Rf + βp x (rm minus rf). In practice, output voltage swing is also limited to lower values to avoid transistor saturation. The characteristics shifts left if the ratio of βn/βp is greater than 1(say 10). Βp is equal to Wa x βa + Wb x βb + ... Wn x βn. Hence, it is clear that pseudo NMOS is a type … Rp is the required return for my portfolio. Q8. – plot of Vout as a function of Vin – vary Vin from 0 to VDD – find Vout at each value of Vin. ratio of βn/βp If βn/βp = 1, then switching point is Vdd/2 If W/L of both N and P transistors are equal Then βn/βp = μ n/ μ p = electron mobility / hole mobility This ratio is usually between 2 and 3 Means ratio of W ptree/W ntree needs to be between 2 and 3 for βn/βp= 1 For this class, we’ll use W ptree/W ntree = 2 7 ECE 410, Prof. F. Salem/Prof. If βn = βp, then Vin is equal to _____ Option A: Vdd Option B: Vss Option C: 2Vdd Option D: 0.5Vdd Q7. AnsAns: Gate voltage higher than the threshold voltage : Gate voltage higher than the threshold voltage an and the drain d the drain voltage is slightly higher than source voltage. high-power applications of more than 1W. Wa represents the $ invested in A / total $ invested .. $ invested in A would be the number of shares x price per share A direct path exists between V out and the ground node, resulting in a steady-state value of 0 V. On the other hand, when the input voltage is low (0 V), NMOS and PMOS transistors are off and on, respectively. Since both transistors are in saturation, they act as current sources. Typical efficiency is between 10% to 20%. size for all tx, can get betas equal by making Wp larger than Wn. ... n then L W L W ... can get betas equal by making Wp larger than Wn. Vin = VDD + Vtp +Vtn (βn + βp)1/2 / 1+ (βn + βp)1/2. 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